Circuit structure and process thereof

Details Circuit structure and process thereof Circuit structure and process thereof

2007-04-24

2010-06-29

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S744000, C257S758000, C257SE21495, C257SE23010

Reexamination Certificate

active

07745933

ABSTRACT:
A circuit structure has a first dielectric layer, a first circuit pattern embedded in the first dielectric layer and having a first via pad, a first conductive via passing through the first dielectric layer and connecting to the first via pad, and an independent via pad disposed on a surface of the first dielectric layer away from the first via pad and connecting to one end of the first conductive via. The circuit structure further has a second dielectric layer disposed over the surface of the first dielectric layer where the independent via pad is disposed, a second conductive via passing through the second dielectric layer and connecting to the independent via pad, and a second circuit pattern embedded in the second dielectric layer, located at a surface thereof away from the independent via pad, and having a second via pad connected to the second conductive via.

REFERENCES:
patent: 2002/0145203 (2002-10-01), Adae-Amoakoh et al.
patent: 2007/0281464 (2007-12-01), Hsu
patent: 2008/0001297 (2008-01-01), Lotz et al.
patent: 2008/0006945 (2008-01-01), Lin et al.

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