Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-04-21
2011-12-13
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000, C338S0220SD, C361S104000
Reexamination Certificate
active
08076751
ABSTRACT:
An integral circuit protection device includes a substrate disposed between first and second terminals. The substrate is composed of a resistive material. A first conductive layer is disposed on a first surface of the substrate and in electrical contact with the first terminal. A second conductive layer is disposed on a second surface of the substrate. A first electrically insulating layer is disposed on the second conductive layer and substantially covers the second conductive layer. The first electrically insulating layer includes an aperture. A fuse element is disposed on the first electrically insulating layer and is in electrical contact with the second conductive layer through the aperture and in electrical contact with the second terminal. The fuse element is in electrical series with the resistive material. A second electrically insulating layer is disposed over the fuse element.
REFERENCES:
patent: 4432722 (1984-02-01), Bohan et al.
patent: 5898294 (1999-04-01), Gold
patent: 2006/0049466 (2006-03-01), Egawa et al.
Kacvinsky Daisak PLLC
Littelfuse Inc.
Wojciechowicz Edward
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