Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-03-28
2006-03-28
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S706000, C257S712000
Reexamination Certificate
active
07019394
ABSTRACT:
A circuit package includes a base portion and a first metal pattern disposed on a substrate surface. Second and third metal patterns are disposed on another substrate surface, and electrically coupled to first and second vias. The third metal pattern forms a gap to electrically isolate it from the second metal pattern. A circuit package includes a substrate having an opening and a single heat sink positioned in the opening to expose top and bottom surfaces through top and bottom surfaces of the substrate. Selective plating includes applying first and second metal patterns to a substrate surface, creating a potential voltage difference between the first metal pattern and a metal source, and plating the first metal pattern by attracting a first metal type to the voltage potential of the first metal pattern. The voltage potential of the first metal pattern is less than the voltage potential of the metal source.
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“Thermal VIA/BGA”, Micro Substrates Corporation, website, 3 pages, © 2000, found at: http://www.microsubstrates.com/body—thermal%20via—bga.html. on Sep. 13, 2003.
Technical Schematic entitled “Modification of Ceramic Detail, Thickness & Base,” dated Jan. 29, 2003, Kyocera Corporation.
Bennett Jeffrey A.
Finot Marc
Kohler Robert
Lake Rickie C.
Nguyen Tam
Intel Corporation
Malsawma Lex H.
Marshall & Gerstein & Borun LLP
Smith Matthew
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