Circuit of sensing a fuse cell in a flash memory

Static information storage and retrieval – Floating gate – Particular biasing

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Details

3652257, 36518533, G11C 1606

Patent

active

060210672

ABSTRACT:
This invention discloses a circuit of sensing a fuse cell used for repairing a failed memory cell, the circuit comprising a power-on reset circuit to generate reset pulses at the time of power-on of the flash memory, a reference circuit to latch an initial state according to output signal of the power-on reset circuit, a voltage divider circuit to output the voltage for sensing a fuse cell in said reference circuit according to output signal of the reference circuit, and a main memory cell data latch circuit to latch information on the fuse cell according to output signals of the power-on reset circuit and the reference circuit.

REFERENCES:
patent: 5200922 (1993-04-01), Rao
patent: 5327384 (1994-07-01), Ninomiya
patent: 5677882 (1997-10-01), Isa et al.

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