Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Portion of housing of specific materials
Reexamination Certificate
2006-03-30
2010-12-21
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Portion of housing of specific materials
C257S528000, C257S536000, C257S608000, C257S678000, C257S701000, C257SE23001
Reexamination Certificate
active
07855450
ABSTRACT:
In a circuit module for a high frequency, a resistance film is formed on a side of a semiconductor circuit chip, mounted above a dielectric substrate through ground metal layers, opposite to the dielectric substrate. A distance from the ground metal layer to the resistance film is a ¼ wavelength at a predetermined frequency, and the resistance film has a sheet resistance equal to a characteristic impedance of air. A second dielectric substrate with the metal layer formed on a side opposite to the resistance film can be mounted. When being adhered to the second dielectric substrate, the resistance film has a characteristic impedance determined by a permittivity of a material of the semiconductor circuit chip. When being formed in space from the semiconductor circuit chip, the resistance film has a sheet resistance equal to a characteristic impedance of air. The thickness of the second dielectric substrate is a ¼ wavelength in a desired frequency.
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Nunokawa Mitsuji
Ohashi Yoji
Shimura Toshihiro
Eudyna Devices Inc.
Fujitsu Limited
Hanify & King P.C.
Nguyen Cuong Q
Tran Trang Q
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