Semiconductor device manufacturing: process – Repair or restoration
Patent
1997-05-23
1998-04-21
Tsai, Jey
Semiconductor device manufacturing: process
Repair or restoration
438619, H01L 2100
Patent
active
057417270
ABSTRACT:
A fast economical method for modification or repair of micro-circuit wiring patterns covered by a dielectric using a conducting bridge and focused ion beam technology. A conducting bridge is formed on the dielectric between selected points of the wiring pattern using a mask formed by assembling selectively shaped pieces of a transparent mask material such as plastic. The conducting bridge is formed from a material such as gold, copper, or platinum and has sufficient conductivity for long distances. A focused ion beam is then used to form contact holes in the dielectric thereby exposing selected regions of the wiring pattern for connection to the conducting bridge. Connecting material is then selectively deposited using focussed ion beam assisted chemical vapor deposition to connect the conducting bridge to the appropriate points of the wiring pattern. The length of the connecting material does not exceed about 200 micrometers and thus has adequate conductivity. If desired, a focussed ion beam can then be used to form delete holes in the dielectric and remove parts of the wiring pattern.
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Ackerman Stephen B.
Industrial Technology Research Institute
Prescott Larry J.
Saile George O.
Tsai Jey
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