Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Reexamination Certificate
2007-12-11
2007-12-11
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
C257S206000, C257SE27013
Reexamination Certificate
active
10537124
ABSTRACT:
Main-transistors M1and M2are divided into sub-transistors that are arrayed in a matrix with four rows and four columns to form four cells so that each of the cells is formed of four of the sub-transistors that have a common center. This can realize a layout configuration that is as good in matching of the main-transistors M1and M2as a four-segment layout scheme and takes small pattern area.
REFERENCES:
patent: 4121197 (1978-10-01), Ogawa et al.
patent: 5644517 (1997-07-01), Ho
patent: 5959928 (1999-09-01), Oh et al.
patent: 6404695 (2002-06-01), Fujino et al.
patent: 6552402 (2003-04-01), Ozasa et al.
patent: 08-274259 (1996-10-01), None
patent: 2001-168197 (2001-06-01), None
Mao-Feng et al. (2001) “Current Mirror Layout Strategies for Enhancing Matching Performance,” Analog Integrated Circuits and Signal Processing 28, pp. 9-26.
Marcel J. M. Pelgrom et al. (1989) “Matching Properties of MOS Transistors,” IEEE Journal of Solid-State Circuits 24(5), pp. 1433-1439.
Kebede Brook
Morrison & Foerster / LLP
LandOfFree
Circuit layout structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Circuit layout structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit layout structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3853246