Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1996-09-30
1999-03-09
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257798, 257797, 257509, H01L 2900, H01L 23544, H01L 2329
Patent
active
058805150
ABSTRACT:
An integrated circuit includes a substrate and at least two circuits, such as a digital circuit and an analog circuit. The substrate is preferably derived from a bulk substrate wafer. The integrated circuit preferably comprises at least two islands in the substrate for noise isolation between the circuits. The two islands are buried-layers that are implanted, by preference, using conventional MeV techniques. A method of manufacturing an integrated circuit includes a substrate and at least two circuits. The method comprises the step of implanting at least two islands in the substrate for noise isolation between the circuits. The implanting is accomplished by conventional masking and high-energy implantation, such as MeV.
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Clark Jhihan B.
LSI Logic Corporation
Lucente David K.
Saadat Mahshid
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