Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-09-30
2000-09-05
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257462, 257463, 257464, 257443, 257444, A01L 3106, H01L 3100
Patent
active
061147400
ABSTRACT:
The circuit-integrating light-receiving element of this invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type formed over the semiconductor substrate; a first semiconductor layer of the first conductivity type for dividing the first semiconductor layer into semiconductor regions of the second conductivity type; light-detecting sections being constituted by the divided semiconductor regions and underlying regions of the semiconductor substrate, a divided photodiode being composed of the light-detecting sections; a second semiconductor layer of the second conductivity type formed only in the vicinity of the first semiconductor layer of the first conductivity type functioning as a division section of the divided photodiode and within the regions of the semiconductor substrate forming the respective light-detecting sections; and a second semiconductor layer of the first conductivity type formed in a surface region of the first semiconductor layer of the second conductivity type including the division section so as to cover an upper part of the second semiconductor layer of the second conductivity type.
REFERENCES:
patent: 5177581 (1993-01-01), Kubo et al.
patent: 5360987 (1994-11-01), Shibib
patent: 5418396 (1995-05-01), Mita
patent: 5767538 (1998-06-01), Mullins et al.
patent: 5825071 (1998-10-01), Takakura
Patent Abstract of Japan, vol. 14, No. 564 (E-1013), Dec. 14, 1990 and JP 2-246168.
Fukunaga Naoki
Kubo Masaru
Takimoto Takahiro
Fenty Jesse A.
Saadat Mahshid
Sharp Kabushiki Kaisha
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