Circuit including an MOS transistor whose gate is protected from

Details Circuit including an MOS transistor whose gate is protected from Circuit including an MOS transistor whose gate is protected from

1981-06-12

1983-05-24

Eisenzopf, Reinhard J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

307200B, 361 56, H02H 320

Patent

active

043853374

ABSTRACT:
A protected MOS transistor circuit includes an input MOS transistor and a depletion mode MOS transistor having a drain-source current path connected between ground and the gate of the input MOS transistor of obviating rupture of the gate oxide of the input MOS transistor when power is off. The depletion mode MOS transistor's gate receives a control signal only when power is on which renders the depletion mode MOS transistor nonconductive when power is on. The depletion mode MOS transistor is conductive when power is off.

REFERENCES:
patent: Re27972 (1974-04-01), Borror et al.
patent: 3636385 (1972-01-01), Koepp
patent: 3746946 (1973-07-01), Clark
patent: 3819952 (1974-06-01), Enomoto et al.
patent: 3909674 (1975-09-01), Spence et al.
MOS/LSI Design & Application, pp. 96-101, William et al., McGraw-Hill Book Company, 1972.

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