Circuit for the production of a programming high voltage

Details Circuit for the production of a programming high voltage Circuit for the production of a programming high voltage

1997-05-06

1999-03-30

Fears, Terrell W.

Static information storage and retrieval

Powering

36518901, G11C 1300

Patent

active

058897208

ABSTRACT:
To form a ramp signal for the programming of a memory cell without losing excess voltage in a control circuit, the output of a voltage pull-up circuit is connected to the programming input using a P type transistor. It is shown that this P type transistor then charges the memory array at constant current, prompting a linear increase of the voltage. This results in preventing the memory cell that is to be programmed from being subjected to excessively sudden variations of voltage. It is shown that by acting in this way, the integrated circuit can be made to work even with very low voltages.

REFERENCES:
patent: 4628487 (1986-12-01), Smayling
patent: 5193073 (1993-03-01), Bhuva
Prench Search Report from French Patent Application 96 05719, filed May 7, 1996.
Proceedings IEEE Custom Integrated Circuits Conference, May 16-19, 1988, New York, US, pp. 4.2.1-4.2.4, Carney, et al., "Configurable EEPROMs For ASICs".

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