Circuit for the generation of a high voltage for the programming

Details Circuit for the generation of a high voltage for the programming Circuit for the generation of a high voltage for the programming

1998-09-10

1999-11-16

Mai, Son

Static information storage and retrieval

Floating gate

Particular biasing

36518909, 365226, G11C 1604

Patent

active

059869364

ABSTRACT:
A circuit for the generation of a high ramp voltage for the supply of voltage to a capacitive load, in particular a high voltage for the programming or erasure of at least one memory cell of a non-volatile memory, comprises floating-gate transistors as storage elements. This generation circuit comprises a P type load transistor connected by its source to the output of a voltage booster delivering a high direct and constant voltage (HIV), by its drain to the load, the high ramp voltage being available at this drain, and by its control gate to a control feedback circuit to control the load current. This circuit achieves automatic control over the slope of the high ramp voltage (Vpp). Application to the generation of a high ramp voltage whose slope is smaller than a critical slope and the maximum value is high.

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Lucero et al., "A 16 kibt Smart 5V-only EEPROM with Reduncancy", IEEE Journal of Solid-State Circuits, vol. 18, No. 4, Oct. 1983, New York--pp. 539-544.
French Search Report (Jun. 2, 1998).

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