Static information storage and retrieval – Floating gate
Reexamination Certificate
2006-09-25
2009-06-30
Tan, Vibol (Department: 2819)
Static information storage and retrieval
Floating gate
C365S154000, C365S227000
Reexamination Certificate
active
07554841
ABSTRACT:
A circuit has a storing portion, a write portion and a read portion. In one embodiment, read portion has a transistor which has a substantially thinner gate oxide than the transistors in the storing portion and the transistors in the write portion. In an alternate embodiment, circuit has a plurality of read ports. In an alternate embodiment, selecting the optimal gate oxide thickness for the transistors in circuit allows the trade-off between transistor switching speed and gate leakage current to be optimized to produce a circuit having a fast enough read access time and a low enough standby power.
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Freescale Semiconductor Inc.
Hill Susan C.
Tan Vibol
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