Circuit for sensing FET or IGBT drain current over a wide dynami

Details Circuit for sensing FET or IGBT drain current over a wide dynami Circuit for sensing FET or IGBT drain current over a wide dynami

1988-06-17

1989-10-24

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including field effect transistor

307530, H03F 316

Patent

active

048765171

ABSTRACT:
A current sensing circuit includes a pair of power devices connected in parallel. The mirror terminal of the first power device is coupled to a small sense resistance, and the mirror terminal of the second power device is connected to a large sense resistance. Each mirror terminal is coupled to its own comparator. Small currents are sensed by the comparator coupled to the mirror terminal of the first power device, and large currents are sensed by the comparator coupled to the mirror terminal of the second power device. If multiple mirror terminals are not available, a large sense resistance may be connected to the mirror terminal of the power device, and a small sense resistance may be selectively connected in parallel with the large resistance to provide low current-sensing capabilities. Accuracy of the device is enhanced by circuitry which minimizes the effect of integrated impedance variation and a variation in the low sense resistances.

REFERENCES:
patent: 4507572 (1985-03-01), Hashimoto et al.
patent: 4593380 (1986-06-01), Kocher et al.

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