Circuit for protecting an IC from noise

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Amplitude control

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Details

327314, 327320, 327328, 361 92, H03K 508

Patent

active

059429313

ABSTRACT:
A first MOS transistor (5) is provided between a power source terminal and an input terminal (3). A second MOS transistor (6) is provided between a ground terminal (2) and the input terminal (3). The gate of the first MOS transistor (5) is electrically connected to a node (8) and a resistor (9) is electrically connected between the node (8) and another ground terminal (2). The gate of the second transistor (6) is electrically connected to the ground terminal (2). When negative pulse-shaped static electricity is applied to a circuit constructed as described above, the potential applied to the gate of the first MOS transistor (5) is limited low by a voltage drop developed across the resistor (9). Therefore, the current flowing between the source and drain of the first MOS transistor (5) can be controlled low and a substrate current produced due to impact ionization can be prevented from flowing. It is thus possible to obtain a stabler operation of a semiconductor integrated circuit device.

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patent: 4937700 (1990-06-01), Iwahashi
patent: 4980792 (1990-12-01), Kertis et al.
patent: 5001373 (1991-03-01), Bator et al.
patent: 5488321 (1996-01-01), Johnson

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