Circuit for protecting a transistor during the manufacture...

Details Circuit for protecting a transistor during the manufacture... Circuit for protecting a transistor during the manufacture...

2011-06-07

2011-06-07

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S529000, C257S532000

Reexamination Certificate

active

07956385

ABSTRACT:
A circuit for protecting a transistor during the manufacture of an integrated circuit device is disclosed. The circuit comprises a transistor having a gate formed over an active region formed in a die of the integrated circuit device; a protection element formed in the die of the integrated circuit device; and a programmable interconnect coupled between the gate of the transistor and the protection element, the programmable interconnect enabling the protection element to be decoupled from the transistor.

REFERENCES:
patent: 5998299 (1999-12-01), Krishnan
patent: 7772093 (2010-08-01), Luo et al.
patent: 2001/0042887 (2001-11-01), Lee et al.
patent: 2002/0063298 (2002-05-01), Wang
patent: 04158578 (1992-06-01), None
Lin, W. , “A New Technique for Measuring Gate-Oxide Leakage in Charging Protected MOSFETS”, IEEE Transactions on Electron Devices IEEE USA, vol. 54, No. 4, Apr. 2007, pp. 683-691, ISSN 0018-9383.

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