Circuit for measuring current in a power MOS transistor

Details Circuit for measuring current in a power MOS transistor Circuit for measuring current in a power MOS transistor

1991-01-07

1994-02-15

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324123R, G01R 130, G01R 3126

Patent

active

052870553

ABSTRACT:
A circuit for measuring current in a power MOS transistor (M0) comprises second (M1) and third (M2) transistors in series of the same type and same technology as, but having a smaller surface than, the power transistor and arranged in parallel on the latter. The two series transistors have their gates connected to the gate of the power transistor. The current in transistor (M2) which is connected to the reference electrode of the power transistor is measured.

REFERENCES:
patent: 4518869 (1985-05-01), Herold
patent: 4588950 (1986-05-01), Henley
patent: 4789825 (1988-12-01), Carelli et al.
patent: 5013935 (1991-05-01), Mahabadi
Fay, "Current-Mirror FETs Cut Costs and Sensing Losses", Electrical Design News, Sep. 4, 1986, pp. 193-200.
Schultz, "Sense-Cell MOSFET Eliminates Losses in Source Circuit", Electrical Design News, Jun. 26, 1986, pp. 169-178.

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