Circuit for high-precision analog reading of nonvolatile memory

Details Circuit for high-precision analog reading of nonvolatile memory Circuit for high-precision analog reading of nonvolatile memory

1999-11-12

2000-10-03

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

36518909, G11C 1300

Patent

active

061282286

ABSTRACT:
An analog read circuit includes an output transistor connected to a memory cell to be read, and an operational amplifier having a non-inverting input connected to the drain terminal of the memory cell, an inverting input connected to a reference terminal, and an output, forming the output of the reading circuit and connected to the gate terminal of the output transistor. Bias transistors maintain the memory cell and the output transistor in the linear region, and the operational amplifier and the output transistor form a negative feedback loop so that the output voltage V.sub.O of the read circuit is linerly dependent upon the threshold voltage the memory cell. The reading circuit has high precision and high reading speed.

REFERENCES:
patent: 5963462 (1999-10-01), Engh et al.

Affiliated with

Also associated with

Rating

Circuit for high-precision analog reading of nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuit for high-precision analog reading of nonvolatile memory , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit for high-precision analog reading of nonvolatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-201891