Circuit for driving a semiconductor device with protection again

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307575, 307577, 307583, 307584, 307362, 307264, 307270, 307254, 307 101, H03K 17687, H03K 5153, H03L 500, B62D 4500

Patent

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048900206

ABSTRACT:
An arrangement for driving a power semiconductor device (1) has an input (12) for receiving a control signal and a control output (11) for connection to the control electrode (9) of the power semiconductor device (1). The semiconductor device connected in series with a load (5) across a power supply (3,6). The arrangement includes an active turn-off device (T67) to achieve fast turn-off of the device (1). The arrangement further includes a threshold detecting means (29) which operates to turn on the semiconductor device in the event of a high voltage transient on the power supply. This reduces the voltage across the semiconductor device and hence reduces power dissipation within the semiconductor during transients. The turn-off device (T67) could be damaged by high transient currents when the threshold detecting means (29) conducts, so a further threshold detecting means (30) acts to disable the turn-off means (T67) during transients. The arrangement may be integrated monolithically with an associated semiconductor output device. An intelligent power switch circuit including such an arrangement is suitable for use in a motor vehicle.

REFERENCES:
patent: 4430586 (1984-02-01), Hebenstreit
patent: 4461966 (1984-07-01), Hebenstreit
patent: 4491744 (1985-01-01), Corey
patent: 4691129 (1987-09-01), Einzinger et al.

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