Circuit for driving a gated p-n-p-n device

Details Circuit for driving a gated p-n-p-n device Circuit for driving a gated p-n-p-n device

1988-03-30

1991-06-04

Zazworsky, John

Electrical transmission or interconnection systems

With nonswitching means responsive to external nonelectrical...

Temperature responsive

307634, 307637, H03K 1772

Patent

active

050216945

ABSTRACT:
A circuit for driving a gated p-n-p-n device comprises a p and/or n-gate electrodes provided on a p and/or n-gate regions of a p-n-p-n device, and a rectifying device provided between the p or n-gate electrode provided on a gate region which is higher in its impurity density than the other gate region and an anode or cathode electrode of the p-n-p-n device and/or a resistance means provided between the p or n-gate electrode provided on a gate region which is lower in its impurity density than the other gate region. In the circuit for driving a gated p-n-p-n device, excess carriers are expelled from the p and/or n-gate electrodes through the rectifying device and/or resistance means to the external of the p and/or n-gate regions.

REFERENCES:
patent: 3488522 (1970-01-01), Cameron et al.
patent: 3514636 (1970-05-01), Farrall
E. D. Wolley, "Gate Turn-Off in p-n-p-n Devices", IEEE Transactions on Electron Devices, vol. ED-13, No. 7, Jul. 1966, pp. 590-597.

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