Circuit for discharging bootstrapped nodes in integrated circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307200B, 307450, 307482, 307304, H03K 1710

Patent

active

045932140

ABSTRACT:
A sub-circuit for discharging a relatively high voltage node in an integrated circuit includes an enhancement transistor connected between ground and an intermediate node and a depletion transistor connected between the intermediate node and the high voltage node, both of the transistors having the same gate voltage.

REFERENCES:
patent: 3991326 (1976-11-01), Kawagoe et al.
patent: 4069430 (1978-01-01), Masuda
patent: 4296335 (1981-10-01), Simcoe
patent: 4318040 (1982-03-01), Hilbourne
patent: 4384216 (1983-05-01), Pricer
patent: 4429237 (1984-01-01), Cranford, Jr. et al.
patent: 4495427 (1985-01-01), Cartwright, Jr. et al.
Baran et al, "High Voltage Field-Effect Transistor", IBM Tech. Disc. Bull., vol. 22, No. 1, Jun. 1979 p. 134.

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