Circuit for detecting high voltage level in MOS technology

Details Circuit for detecting high voltage level in MOS technology Circuit for detecting high voltage level in MOS technology

1991-02-22

1992-03-17

Zazworsky, John

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307363, H03K 5153

Patent

active

050971468

ABSTRACT:
A circuit for detecting the high voltage level of a voltage V.sub.cc in MOS technology comprises a voltage source made of at least one P-type MOS transistor and one N-type MOS transistor, and delivers an output voltage VA such that: O<VA<VTN if V.sub.cc .ltoreq.C and VA=Vcc-C+VTN if V.sub.cc >C, VTN being the threshold voltage of the N-type transistor and C being a substantially constant voltage. The circuit further comprises means for delivering an output logic level which switches over when the high voltage level of the voltage V.sub.cc exceeds a predetermined threshold, said means being connected to the voltage source. The invention can be applied to EPROMs or EEPROMs.

REFERENCES:
patent: 4626704 (1986-12-01), Takata et al.
patent: 4658156 (1987-04-01), Hashimoto
patent: 4709165 (1987-11-01), Higuchi et al.
patent: 4709172 (1987-11-01), Williams

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