Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-02-08
2005-02-08
Le, Thong Q. (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S226000
Reexamination Certificate
active
06853584
ABSTRACT:
A non-volatile memory semiconductor device has a circuit to compensate for the variation in the data pattern to be programmed. The variation in the data patter creates a variation in the current requirement. The array receives a plurality of data pattern signals which affect the total amount of current flowing into a plurality of columns and into the memory array. A high voltage source generates an output which is supplied along a conducting path connected to the group of columns. A pass transistor is in the conducting path controlling the current flow in the conducting path. A current source has a first terminal and a second terminal with the first terminal connected to the output of the high voltage generator and the second terminal connected to the gate of the pass transistor. A plurality of current sources are collectively connected to a node. Each of the plurality of current sources receives a plurality of second signals with each second signal being an inverse of the first signal, and controlling the total amount of current flowing through the node. A current mirror circuit is connected to the node and to the gate of the pass transistor and controls the pass transistor in response to the amount of current flowing through the node.
REFERENCES:
patent: 6163483 (2000-12-01), Pasotti et al.
patent: 6518909 (2003-02-01), Yang et al.
Lin Elbert
Ly Anh
Nguyen Hung Q.
Nguyen Sang Thanh
Gray Cary Ware & Freidenrich LLP
Le Thong Q.
Silicon Storage Technology, Inc.
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