Circuit for automatically biasing RF power transistor by use of

Details Circuit for automatically biasing RF power transistor by use of Circuit for automatically biasing RF power transistor by use of

1996-03-29

1998-01-20

Tran, Toan

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327513, 327480, 327482, G05F 110, H01L 3500, H03K 1760

Patent

active

057105197

ABSTRACT:
A circuit arrangement automatically sets quiescent collector current conditions for a class A/B RF power transistor, which is configured of a plurality of parallel-connected transistors formed in a common semiconductor die. The biasing circuit arrangement includes a temperature-sensing transistor having its collector-emitter current flow path coupled with a programmable constant current source. A differential amplifier circuit is coupled to the base and emitter electrodes of the temperature sensing transistor, and generates a bias voltage for biasing each of the transistors of the RF power device. This bias voltage is combined with a programmable D.C. offset voltage. The values of the constant current and D.C. offset voltage are programmed such that the average of the quiescent collector currents of the parallel-connected transistors of the RF power transistor corresponds to the quiescent collector current through the temperature-sensing transistor. An optional external control voltage may be used to further adjust the bias voltage for the RF power transistor.

REFERENCES:
patent: 3566200 (1971-02-01), Seidler
patent: 3831040 (1974-08-01), Nanba et al.
patent: 3955108 (1976-05-01), Beck
patent: 4004462 (1977-01-01), Dobkin
patent: 4204133 (1980-05-01), Ahmed
patent: 4242598 (1980-12-01), Johnson et al.
patent: 4684880 (1987-08-01), Chan

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