Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-08-30
2005-08-30
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S700000, C257S782000, C257S738000
Reexamination Certificate
active
06936927
ABSTRACT:
A circuit device and a method for fabrication the same is provided. An insulation resin sheet in which the first conductive layer3and the second conductive layer4are adhered to each other by insulation resin2is used. The first conductive path layer5is formed by the first conductive layer3, the second conductive path layer6is formed by the second conductive layer4, and both of the conductive path layers are connected by multi-layer connecting means12. Since a semiconductor element7is adhered to and fixed on overcoating resin8that covers the first conductive path layer5, a multi-layer connection structure can be achieved by the first conductive path layer5and the second conductive path layer6. Further, the second conductive layer4that is made thick can prevent warping from occurring due to a difference in a thermal expansion coefficient.
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Igarashi Yusuke
Kobayashi Yoshiyuki
Nakamura Takeshi
Sakamoto Noriaki
Fish & Richardson P.C.
Flynn Nathan J.
Mandala Jr. Victor A.
SANYO Electric Co., Ltd.
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