Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-03-27
2008-11-04
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S678000, C257S691000, C257SE23098, C257SE25031, C257S707000, C257S730000, C257S731000
Reexamination Certificate
active
07446406
ABSTRACT:
A circuit device includes a ceramic substrate, an Al wiring layer provided on the ceramic substrate, and a semiconductor device and a bus bar which are electrically connected to the wiring layer. On part of the wiring layer, a Ni layer is plated. Thus a coated region in which the wiring layer is coated with nickel having solder wetability superior to aluminum and an exposing region in which the wiring layer is exposed as viewed from above the ceramic substrate are provided. The semiconductor device is connected onto the Ni layer within the coated region through solder. The bus bar is ultrasonically bonded to the wiring layer within the exposing region as viewed from above the ceramic substrate. Thus, the circuit device including the semiconductor device and the bus bar that are bonded to the ceramic substrate by sufficient bonding strength and its manufacturing method are provided.
REFERENCES:
patent: 4172261 (1979-10-01), Tsuzuki et al.
patent: 6166937 (2000-12-01), Yamamura et al.
patent: 6670216 (2003-12-01), Strauch
patent: 6798060 (2004-09-01), Strauch
patent: 2002/0112882 (2002-08-01), Hirakawa
patent: 2003/0112605 (2003-06-01), Hable
patent: 1 187 198 (2002-03-01), None
patent: 2003-060129 (2003-02-01), None
patent: 1 416 533 (2004-05-01), None
patent: 11-195725 (1999-07-01), None
patent: 11-346037 (1999-12-01), None
patent: 2000-232189 (2000-08-01), None
patent: 2002-009190 (2002-01-01), None
patent: 2002-164461 (2002-06-01), None
patent: 2003-188310 (2003-07-01), None
Mizuno Takahito
Wakita Shigeru
Yamamoto Ren
Green Telly D
Kenyon & Kenyon LLP
Smith Zandra
Toyota Jidosha & Kabushiki Kaisha
LandOfFree
Circuit device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Circuit device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4022281