Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
2008-03-11
2008-03-11
Tran, Long K. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C257S245000, C257S416000, C257S444000, C257S680000, C257SE23188, C257SE23193
Reexamination Certificate
active
11078370
ABSTRACT:
A circuit device is provided which can be manufactured at reduced costs and which is highly reliable. The circuit device includes a Sensor area formed on part of a semiconductor substrate, a circuit area formed around the sensor area on the semiconductor substrate to process electric signals produced at the sensor area, and a sealring disposed between the sensor area and the circuit area. The sealring is disposed between the outer periphery of the sensor area and the inner periphery of the circuit area to surround the sensor area. In the circuit device, the sealring prevents water or moisture from infiltrating from the sensor area into the circuit area.
REFERENCES:
patent: 4838089 (1989-06-01), Okada et al.
patent: 2003/0216010 (2003-11-01), Atlas
patent: 2005/0146000 (2005-07-01), Kim et al.
patent: WO 01/19134 (2001-03-01), None
Mullenborn et al.; “Stacked Silicon Microphones”;Eurosensors XIV; pp. 209-212; c. 2000; Denmark.
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
Tran Long K.
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