Circuit containing integrated bipolar and complementary MOS tran

Details Circuit containing integrated bipolar and complementary MOS tran Circuit containing integrated bipolar and complementary MOS tran

1989-03-15

1989-11-28

Mintel, William

357 42, 357 49, 357 50, H01L 2702

Patent

active

048841170

ABSTRACT:
A circuit which contains integrated bipolar and complementary MOS transistors, including wells in the substrate for forming the MOS transistors, the wells also containing isolated bipolar transistors, the wells forming the collector of the bipolar transistor and being surrounded by trenches which are filled with doped polycrystalline silicon. The doped trench reduces the lateral out diffusion from the wells and thus serves to increase the packing density while serving as a collector contact region. The invention is employed in the manufacture of integrated semiconductor circuits having high switching speeds.

REFERENCES:
patent: 3913124 (1975-10-01), Roberson
patent: 4454647 (1984-06-01), Joy et al.
patent: 4571817 (1986-02-01), Birritella et al.
patent: 4604790 (1986-08-01), Bonn
Physics of Semiconductor Devices, Sze, (1981), p. 32, N.Y., John Wiley & Sons, Inc.
IBM Technical Disclosure Bulletin, vol. 25, No. 3B, Title: "Poly Filled Trench Isolation", (Aug. 1982), pp. 1482 through 1484.
Electronics, vol. 42, (Mar. 17, 1969), pp. 185 to 186.

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