Circuit containing integrated bipolar and complementary MOS tran

Details Circuit containing integrated bipolar and complementary MOS tran Circuit containing integrated bipolar and complementary MOS tran

1989-07-13

1991-07-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 59, 437 78, 437203, H01L 21285, H01L 2174, H01L 2176, H01L 21331

Patent

active

050343386

ABSTRACT:
A circuit which contains integrated bipolar and complementary MOS transistors, including wells in the substrate for forming the MOS transistors, the wells also containing isolated bipolar transistors, the wells forming the collector of the bipolar transistor and being surrounded by trenches which are filled with doped polycrystalline silicon. The doped trench reduces the lateral out diffusion from the wells and thus serves to increase the packing density while serving as a collector contact region. The invention is employed in the manufacture of integrated semiconductor circuits having high switching speeds.

REFERENCES:
patent: 3913124 (1975-10-01), Roberson
patent: 4454647 (1984-06-01), Joy et al.
patent: 4571817 (1986-02-01), Birritella et al.
patent: 4604790 (1986-08-01), Bonn
patent: 4746963 (1988-05-01), Uchida et al.
patent: 4749661 (1988-06-01), Bower
patent: 4808548 (1989-02-01), Thomas et al.
patent: 4835115 (1989-05-01), Eklund
patent: 4910572 (1990-03-01), Kameyama
"Physics of Semiconductor Devices", Second Edition, S. M. Sze, (1981), p. 32.
IBM Technical Disclosure Bulletin, vol. 25, No. 3B, Aug. 1982, pp. 1482-1484, Title: "Poly Filled Trench Isolation".
Electronics, vol. 42, (Mar. 17, 1969), pp. 185-186.

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