Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Patent
1995-03-15
1996-08-13
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
257553, 257556, 257560, 257562, 257564, 257566, 327561, 327575, 327576, 327578, H01L 27082, H01L 27102, H01L 2970, H01L 3111
Patent
active
055459188
ABSTRACT:
An integrated circuit including a semiconductor substrate, a semiconductor layer formed on the substrate, a desired bipolar transistor formed in the semiconductor layer. First and second parasitic elements are formed in the integrated circuit. An element is provided which detects when the second parasitic element becomes active or which prevents increase of the collector-to-emitter voltage of the desired bipolar transistor in response to current flowing through the second parasitic transistor. This element may be a semiconductor region formed in the semiconductor layer. The transistor may be an npn or pnp type transistor manufactured according to a complementary bipolar process or other process which results in a transistor with first and second parasitic elements. The present invention is also well-suited for use in the output stage of an operational amplifier. The element which detects activity of the second parasitic transistor intercepts carriers flowing towards the junction isolation bands and substrate from the collector of the desired bipolar transistor.
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DeVito Larry M.
Dos Santos, Jr. Francisco
Analog Devices Inc.
Ngo Ngan V.
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