Circuit configurations to reduce snapback of a transient...

Details Circuit configurations to reduce snapback of a transient... Circuit configurations to reduce snapback of a transient...

2011-04-26

2011-04-26

Jackson, Stephen W (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

Reexamination Certificate

active

07933102

ABSTRACT:
This invention discloses an electronic device formed as an integrated circuit (IC) wherein the electronic device further includes a transient voltage suppressing (TVS) circuit. The TVS circuit includes a triggering Zener diode connected between an emitter and a collector of a bipolar-junction transistor (BJT) wherein the Zener diode having a reverse breakdown voltage BV less than or equal to a BVceo of the BJT where BVceo stands for a collector to emitter breakdown voltage with base left open. The TVS circuit further includes a rectifier connected in parallel to the BJT for triggering a rectified current through the rectifier for further limiting an increase of a reverse blocking voltage. In a preferred embodiment, the triggering Zener diode, the BJT and the rectifier are formed in a semiconductor substrate by implanting and configuring dopant regions of a first and a second conductivity types in a N-well and a P-well whereby the TVS can be formed in parallel as part of the manufacturing processes of the electronic device.

REFERENCES:
patent: 4798975 (1989-01-01), Walczak et al.
patent: 6898061 (2005-05-01), Kimber et al.
patent: 7538997 (2009-05-01), Mallikararjunaswamy

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