Circuit configuration for triggering a power enhancement MOSFET

Details Circuit configuration for triggering a power enhancement MOSFET Circuit configuration for triggering a power enhancement MOSFET

1996-09-26

1998-08-25

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Accelerating switching

327108, 327434, H03K 1704

Patent

active

057986665

ABSTRACT:
Power MOSFETs with a source-side load are often triggered by so-called charge pumps. In order to provide a faster turnoff, until now the gate-to-source capacitance of the power MOSFET, which is typically constructed as an enhancement MOSFET, has been discharged through a depletion MOSFET that is parallel to the gate-to-source path. Those different MOSFET types require complicated and expensive production technology. A circuit configuration is proposed that makes it possible to use solely enhancement MOSFETs.

REFERENCES:
patent: 5475329 (1995-12-01), Jones et al.
patent: 5592117 (1997-01-01), Nadd

Affiliated with

Also associated with

Rating

Circuit configuration for triggering a power enhancement MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuit configuration for triggering a power enhancement MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit configuration for triggering a power enhancement MOSFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-38477