Circuit configuration for monitoring the temperature of a power

Details Circuit configuration for monitoring the temperature of a power Circuit configuration for monitoring the temperature of a power

1996-03-29

1997-12-30

Tran, Toan

Miscellaneous active electrical nonlinear devices, circuits, and

External effect

Temperature

327 81, 327432, H01L 3500, H03K 5153

Patent

active

057035210

ABSTRACT:
The temperature of a power semiconductor component is monitored by feeding the block current of a bipolar transistor which is in thermal contact with the component to an amplifying current mirror. The output signal of the current mirror is compared with a reference current. If the mirrored current is greater than the reference current, then the system produces a corresponding output. Temperatures of the power semiconductor component below 140.degree. C. can be reliably detected.

REFERENCES:
patent: 4574205 (1986-03-01), Nagano
patent: 4875131 (1989-10-01), Leipold et al.
patent: 4943737 (1990-07-01), Guo et al.
patent: 4999567 (1991-03-01), Morigami
patent: 5095227 (1992-03-01), Jeong
patent: 5304861 (1994-04-01), Fruhauf et al.
patent: 5498952 (1996-03-01), Ryat

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