Circuit configuration for monitoring a semiconductor structural

Electricity: electrical systems and devices – Safety and protection of systems and devices – Circuit interruption by thermal sensing

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357 28, 307310, 374178, H02H 504

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active

048751316

ABSTRACT:
A circuit for monitoring the temperature of a semiconductor structural component. The circuit includes a bipolar transistor (1) in thermal contact with a semiconductor structural element to be monitored, and a MOSFET (11) connected in series with a current source (12). The MOSFET (11) is maintained in a nonconducting state with two Zener diodes (13, 14) if the bipolar transistor (1) is the standard operating temperature of the semiconductor structural element. This circuit provides for a reduced zero current signal. The current flowing through the bipolar transistor (1) increases with temperature and the gate-source voltage of the MOSFET (11) is increases until it switches off. If the current flowing through the MOSFET (11) is greater than the impressed current of the current source (12) the potential across the current source takes a step increase a value near the supply voltage (V.sub.DD). This voltage step can then be detected as an excess-temperature signal.

REFERENCES:
patent: 4220873 (1980-09-01), Giordano
patent: 4355344 (1982-10-01), Felici et al.
patent: 4652144 (1987-03-01), Gunther
patent: 4667265 (1987-05-01), Stanojevic et al.
patent: 4730228 (1988-03-01), Einzinger et al.

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