Circuit configuration for gentle shutoff of an MOS semiconductor

Details Circuit configuration for gentle shutoff of an MOS semiconductor Circuit configuration for gentle shutoff of an MOS semiconductor

1994-09-09

1996-06-11

Pellinen, A. D.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

361 57, 327310, H02H 902

Patent

active

055262163

ABSTRACT:
In a circuit configuration for the shutoff of a semiconductor component in the event of excess current, the semiconductor component has gate and cathode terminals and is controlled by the field effect. A controllable switch is connected between the gate and cathode terminals and is made conducting by a control signal. A device controls the controllable switch to a range of high on-state DC resistance when there is excess current and a shutoff signal is simultaneously present.

REFERENCES:
patent: 3969637 (1976-07-01), Minami et al.
IGBT-Technik vom Erfinder (IGBT Technique from an inventor) elektronikindustrie Jan. 1991, pp. 14, 16-18.

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