Amplifiers – With semiconductor amplifying device – Including field effect transistor
Reexamination Certificate
2006-03-14
2006-03-14
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including field effect transistor
C330S010000
Reexamination Certificate
active
07012468
ABSTRACT:
The circuit configuration and the associated method allow reducing the 1/f noise of MOSFETs in an electronic circuit, especially in an integrated circuit with one or more MOSFETs. At least one direct current and/or at least one direct voltage source for adjusting constant working point(s) of the MOSFET(s) is/are assigned to one or more or all MOSFETs. At least one periodically oscillating current and/or voltage source is assigned to one or more or all MOSFETs so that the respective working points periodically oscillate about the constant working point(s) in such a manner that impurity states in the oxide of the MOSFET, which are recharged under the condition of a constant working point according to the principles of statistics such that they determine the 1/f noise signal, are no longer recharged statistically but at a lower probability due to the modulatory frequency of the periodically oscillating sources.
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Brederlow Ralf
Thewes Roland
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Nguyen Patricia
Stemer Werner H.
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