Circuit built-in light-receiving element

Details Circuit built-in light-receiving element Circuit built-in light-receiving element

1997-07-17

2000-04-11

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257461, 257431, 257432, 257414, 257440, 257 79, 257 80, 257 82, 257 83, 257 84, 257187, 257555, H01L 3106, H01L 3100, H01L 2984

Patent

active

060491183

ABSTRACT:
A circuit built-in light-receiving element includes a buried diffusion layer of the second conductivity type, a buried diffusion layer of the first conductivity type, an epitaxial layer of the second conductivity type, a diffusion layer of the first conductivity type, and a signal processing circuit element. The buried diffusion layer of the second conductivity type is formed in a first region on a substrate of the first conductivity type. The buried diffusion layer of the first conductivity type is selectively formed in the buried diffusion layer of the second conductivity type. The epitaxial layer of the second conductivity type is formed on the buried diffusion layer of the first conductivity type. The buried diffusion layer of the first conductivity type and the epitaxial layer of the second conductivity type constitute a light-receiving element. The diffusion layer of the first conductivity type reaches the buried diffusion layer of the first conductivity type through the epitaxial layer of the second conductivity type. The signal processing circuit element is formed in a second region on the substrate of the first conductivity type.

REFERENCES:
"Preamplifier IC with Photodetectors for Optical Pickup" The Institute of electronics and Communication Engineers, Communication Technical Report, pp. 75-81, Nov. 1986.
English language translation of Japanese Office Action dated Apr. 13, 1999 (Hei 11).

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