Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-05-24
2011-05-24
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23141, C257S700000, C257S701000, C257S668000, C257S774000, C257S778000, C257S737000, C257S738000, C174S050000, C428S131000, C427S097600
Reexamination Certificate
active
07948085
ABSTRACT:
A circuit board structure and a fabrication method of the same are disclosed according to the present invention. The circuit board structure includes: a carrier board with at least one surface formed with a circuit layer having electrically connecting pads; a first solder mask formed on the carrier board and the circuit layer and formed with first openings for exposing the electrically connecting pads; and a second solder mask formed on the first solder mask and formed with second openings for exposing the first openings and the electrically connecting pads. The first solder mask is made of a high-insulation photosensitive material characterized by presence or absence of impurities, such as microparticles, to have enhanced fluidity for being filled in the circuit layer, thereby preventing metal ions migration and subsequent metal hypha electricity discharge which might otherwise affect electrical performance, therefore the present invention is applicable to fine circuit fabrication.
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Shih Chao-Wen
Zeng Zhao-Chong
Pearne & Gordon LLP
Unimicron Technology Corp.
Williams Alexander O
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