Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-06-01
2011-10-11
Landau, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE21214, C257SE21215, C257SE21218, C257SE33053, C438S706000, C438S735000
Reexamination Certificate
active
08035103
ABSTRACT:
The present invention provides a circuit board which can improve characteristics of a circuit element, an electronic device, and a method for producing a circuit board. The method for producing a circuit board of the present invention is a method for producing a circuit board including one or more polysilicon layers at the same layer level, wherein the method includes the steps of: forming a photoresist film on the polysilicon layer; forming a photoresist pattern film having side surfaces with different inclination angles by patterning the photoresist film; forming the one or more polysilicon layers having side surfaces with different inclination angles by etching the polysilicon film using the photoresist pattern film.
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International Search Report for PCT/JP2006/311000 mailed Aug. 15, 2006.
Hall Jessica
Landau Matthew
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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