Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-06-20
2006-06-20
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
07064351
ABSTRACT:
Poly-silicon semiconductor layer21and dummy poly-silicon semiconductor layer25are formed in insulation from each other on glass substrate. Gate insulation film31is formed on poly-silicon semiconductor layer21, dummy poly-silicon semiconductor layer25and glass substrate and covered with scanning and gate lines11, which is overlapped with poly-silicon semiconductor layer21and dummy poly-silicon semiconductor layer25. Poly-silicon semiconductor layer21is coupled with a reference potential to define capacitor Cc and also with scanning and gate line11to define capacitor Cd. Likewise, dummy poly-silicon semiconductor layer25is coupled with a reference potential to define capacitor Cc and also with scanning and gate line11to define capacitor Cd. Capacitors Cc and Cd suppress increase in voltage applied to gate insulation film31between scanning and gate line11and poly-silicon semiconductor layer21due to electrostatic charges.
REFERENCES:
patent: 6781643 (2004-08-01), Watanabe et al.
patent: 2002/0142554 (2002-10-01), Nakajima
patent: 2000-187248 (2000-07-01), None
Ho Tu-Tu
Toshiba Matsushita Display Technology Co., Ltd.
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