Circuit arrangement for overtemperature detection

Electricity: electrical systems and devices – Safety and protection of systems and devices – Circuit interruption by thermal sensing

Reexamination Certificate

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C361S093800, C361S024000

Reexamination Certificate

active

07835129

ABSTRACT:
The invention relates to a circuit arrangement for detecting the overtemperature of a semiconductor body. The arrangement comprises at least one field effect transistor, having a parasitic diode, which is integrated in the semiconductor body, wherein the parasitic diode connects a load terminal of the field effect transistor to a bulk terminal of the semiconductor body, and comprising an evaluating unit electrically connected to the parasitic diode via the bulk terminal at the semiconductor body, which is constructed for feeding a current into the parasitic diode and evaluating a temperature-dependent voltage drop across the parasitic diode, the direction of the current fed into the diode being such that it is operated in the forward direction.

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