Circuit arrangement for driving a thyristor with a phototransist

Details Circuit arrangement for driving a thyristor with a phototransist Circuit arrangement for driving a thyristor with a phototransist

1984-10-24

1986-03-25

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252N, 307252UA, 307311, 307580, H03K 1760, H03K 345, H03K 17687

Patent

active

045785961

ABSTRACT:
In a circuit arrangement for drive of a thyristor with a phototransistor, the collector-emitter path of the phototransistor is between one of two alternating voltage terminals and a gate terminal of the thyristor. In order to prevent an activation of the unilluminated phototransistor due to a steep voltage edge (dv/dt) load), its base current given such a load is carried off via an IGFET of the enhancement type. This IGFET is controlled by an IGFET of the depletion type acting as a current source which lies between a gate terminal and source terminal of the enhancement type IGFET. A capacitor is connected in series with the depletion-type IGFET. This series connection lies between the two alternating voltage terminals.

REFERENCES:
patent: 3663838 (1972-05-01), Reimers
patent: 4021683 (1977-05-01), Splatt
patent: 4217618 (1980-08-01), Kellenbenz et al.
patent: 4295058 (1981-10-01), Lade et al.
patent: 4324989 (1982-04-01), Stut
patent: 4535251 (1985-08-01), Herman et al.
Siemens Components XVII (1982), No. 3, "Solid State Relays (SSR)--Performance and Practical Use", by Walter Brunnler, pp. 83 to 87.

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