Circuit arrangement for controlling power semiconductor...

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver

Reexamination Certificate

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Details

C327S427000

Reexamination Certificate

active

07038500

ABSTRACT:
A current regulated circuit arrangement for controlling a power semiconductor transistor, as example a MOSFET or IGBT power transistor, that includes at least two mirror-symmetrically arranged regulated power sources and an output voltage regulator. A first regulated power source is fed from an unregulated power source and controls the gate of the power transistor such that the power transistor is switched into the conductive state. A second regulated power source is fed from an unregulated power source and controls the gate of the power transistor such that the power transistor is switched into the non-conductive state. A voltage regulator or limiter limits the current at the gate of the power transistor to a operably suitable maximum value.

REFERENCES:
patent: 5977814 (1999-11-01), Ishii
patent: 6222403 (2001-04-01), Mitsuda
patent: 6222414 (2001-04-01), Cini et al.
patent: 6271708 (2001-08-01), Hoshi et al.
patent: 6545513 (2003-04-01), Tsuchida et al.
patent: 6556407 (2003-04-01), Elliott et al.
patent: 19855604 (1998-12-01), None
patent: 0620646 (1994-10-01), None
patent: 07321621 (1995-12-01), None

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