Circuit arrangement for controlling a power field-effect switchi

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307573, 307574, H03K 17687

Patent

active

044450559

ABSTRACT:
A power field-effect switching transistor is switched-on by charging its gate-source capacitance by connecting a capacitor thereto by means of a first transistor. Switching-off of the power field-effect switching transistor is achieved by discharging the gate-source capacitance by switching-on a second transistor. In this manner, the charging and discharging processes take place at low resistance, and therefore in a short period of time. As a result, switching times and switching power losses for the power field-effect switching transistor are minimized. In addition, the need for a separate auxiliary voltage source and inductive circuit elements is obviated.

REFERENCES:
patent: 3558921 (1971-01-01), Yokozawa
patent: 4387308 (1983-06-01), Nagami
Rev. Sci. Instrum., vol. 46, No. 8, Aug. 1975, "Design of a Simple and Inexpensive Analog Gate", H. Rosen et al., pp. 1115 and 1116.

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