Circuit arrangement comprising a phototransistor

Details Circuit arrangement comprising a phototransistor Circuit arrangement comprising a phototransistor

1984-10-22

1987-08-18

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 43, 307304, 307311, 307570, H01L 2702

Patent

active

046880712

ABSTRACT:
In a circuit arrangement having a phototransistor, in order to increase the inverse voltage strength of the phototransistor, a resistor that carries off the collector-base inverse current generally lies between the base zone and the emitter zone of the phototransistor. This resistor should be as large as possible given illumination in order to increase the current gain. The resistor according to the invention is formed by the drain-source path of an IGFET of depletion type whose gate terminal is at a fixed potential. The IGFET is conductive in the unilluminated condition of the phototransistor. During illumination, its resistance increases given an increasing photocurrent.

REFERENCES:
patent: 3264493 (1966-08-01), Price
patent: 3518454 (1970-06-01), Feneh
patent: 4390790 (1983-06-01), Rodriguez
patent: 4396932 (1983-08-01), Alonas
patent: 4441117 (1984-04-01), Zommer
IEEE Electron Device Letters, vol. EDL-1, No. 5, May, 1980 "A New Photo-Sensitive Voltage-Controlled Differential Negative Resistance Device--The Lambda Bipolar Photo-Transiscot", by Ching-Yuan Wu et al., pp. 81 and 82.
Siemens Components XVII (1982) No. 3, pp. 83 through 87--"Solid State Relays (SSR)--Performance and Practical Use", by Walter Brunnler.

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