Circuit and technique for accurately sensing low voltage...

Details Circuit and technique for accurately sensing low voltage... Circuit and technique for accurately sensing low voltage...

2005-11-08

2005-11-08

Ho, Hoai (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185050, C365S185180, C365S189090, C365S207000

Reexamination Certificate

active

06963506

ABSTRACT:
An exemplary sensing circuit for sensing the current drawn by a target memory cell comprises a first transistor connected across a first node and a second node, a load connected across the second node and a third node, and a voltage boosting circuit coupled to a supply voltage, wherein the voltage boosting circuit supplies a voltage at the third node which is greater than the supply voltage.

REFERENCES:
patent: 5119330 (1992-06-01), Tanagawa
patent: 5262984 (1993-11-01), Noguchi et al.
patent: 5841698 (1998-11-01), Hirano et al.
patent: 5986929 (1999-11-01), Sugiura et al.
patent: 6643179 (2003-11-01), Campardo et al.

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