Circuit and programming method for the operation of flash memori

Details Circuit and programming method for the operation of flash memori Circuit and programming method for the operation of flash memori

1998-09-10

2000-10-03

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518502, 36518521, H03K 17687

Patent

active

061282219

ABSTRACT:
A circuit for the operation of flash memories is proposed. By applying a raised voltage on unselected bit lines of a flash memory array during the programming process, the present invention prevents unselected flash cells from undesired programming disturbances. In the programming process, unselected bit lines of the flash memories are provided with a raised voltage higher than the high state operating voltage of the flash memories, in order to prevent undesired disturbances. In the operation circuit, a current limiting circuit is applied for providing the drain current, and a raised voltage source is employed for supplying a raised voltage to the current limiting circuit, in order provide a raised voltage for unselected bit lines.

REFERENCES:
patent: 5253201 (1993-10-01), Atsumi et al.
patent: 5402370 (1995-03-01), Fazio et al.
patent: 5550772 (1996-08-01), Gill
patent: 5736891 (1998-04-01), Buti et al.

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