Static information storage and retrieval – Floating gate – Particular biasing
Patent
1997-08-26
1998-10-13
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
36518518, 3651852, 36518521, G11C 1604
Patent
active
058222502
ABSTRACT:
A circuit (10, 40) and method for autotrim of an embedded threshold voltage reference bit are provided. A FAMOS cell (12, 42) in an integrated circuit chip provides the embedded threshold voltage reference bit. The FAMOS cell (12, 42) is first programmed to a threshold voltage above a desired threshold voltage. The FAMOS cell (12, 42) is then erased to lower the threshold voltage. After erasing, the FAMOS cell (12, 42) is tested to determine whether the threshold voltage is at a desired voltage level. The erasing and testing are accomplished automatically as an on-chip process in an integrated circuit chip. The testing can be based upon a comparison with an output of an internal reference circuit (50) that is responsive to the embedded threshold voltage reference bit. The testing can also be based upon a comparison to an external voltage input or an internal voltage reference.
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Donaldson Richard L.
Holland Robby T.
Nelms David C.
Nguyen Tuan
Texas Instruments Incorporated
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