Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-03-31
2010-12-28
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189150, C365S189070, C365S189090, C365S207000, C365S210100, C365S185200
Reexamination Certificate
active
07859906
ABSTRACT:
A differential sensing circuit and method for enhancing read margin of a memory device are disclosed. The differential sensing circuit includes a first current-to-voltage converter. The circuit includes a first current subtraction circuit having an erase reference cell. A first input terminal of the first current-to-voltage converter is coupled to the first current subtraction circuit. The circuit includes a second current-to-voltage converter. The circuit also includes a second current subtraction circuit having a program reference cell. A first input terminal of the second current-to-voltage converter is coupled to the second current subtraction circuit. Both the first and second current subtraction circuits are coupled to a memory access bias signal. Outputs of the first and second current-to-voltage converters are compared to generate an enhanced read margin output.
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Cypress Semiconductor Corporation
Ho Hoai V
Radke Jay
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