Amplifiers – With semiconductor amplifying device – Including temperature compensation means
Reexamination Certificate
2011-08-09
2011-08-09
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including temperature compensation means
C330S296000, C330S285000
Reexamination Certificate
active
07994862
ABSTRACT:
A circuit and method are provided for reducing dynamic EVM of a power amplifier (PA) used for RF communication. A temperature dependent boost bias signal is applied to the bias input port of amplifier circuitry of the PA in dependence upon a temperature of the amplifier circuitry to compensate for transience in the gain or phase response of the PA while components of the PA is differentially warming-up, advantageously taking into account an actual temperature of the amplifier circuitry.
REFERENCES:
patent: 6661290 (2003-12-01), Sugiura
patent: 6831511 (2004-12-01), Hollingsworth et al.
patent: 6958649 (2005-10-01), Nagamori et al.
patent: 7215204 (2007-05-01), Bambridge et al.
patent: 7256653 (2007-08-01), Maya et al.
patent: 7733186 (2010-06-01), Hosoya et al.
Freedman & Associates
Nguyen Patricia
SiGe Semiconductor Inc.
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